Part Number Hot Search : 
2SA2127 SK433 LL5230B V33ZT1 RL156 CT245 1N3287 SK433
Product Description
Full Text Search

KMM53632000BKG - 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

KMM53632000BKG_1260704.PDF Datasheet


 Full text search : 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V


 Related Part Number
PART Description Maker
KMM53632000BKG KMM53632000BK 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM372F3200CS1 KMM372F3280CS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
Samsung Semiconductor Co., Ltd.
KMM53616000CK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
Samsung Semiconductor Co., Ltd.
KMM53616004CK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
Samsung Semiconductor Co., Ltd.
KMM372V3280CS1 KMM372V3200CS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
Samsung Electronic
SAMSUNG[Samsung semiconductor]
M374F3200DJ1-C M374F3280DJ1-C 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
SAMSUNG SEMICONDUCTOR CO. LTD.
MT46V32M16P-5BC MT46V32M16BN-6C 32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
Micron Technology, Inc.
48SD3208RPFE 48SD3208RPFH 48SD3208RPFK CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
Maxwell Technologies, Inc
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT 8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
Infineon Technologies AG
KMM5364005CSW KMM5364005CSWG 4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
SAMSUNG[Samsung semiconductor]
EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E 512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
Elpida Memory, Inc.
DRAM
 
 Related keyword From Full Text Search System
KMM53632000BKG Memory KMM53632000BKG rohm KMM53632000BKG band KMM53632000BKG bus KMM53632000BKG price
KMM53632000BKG Lead forming KMM53632000BKG vdd KMM53632000BKG ultra KMM53632000BKG flash KMM53632000BKG Ic-on-line
 

 

Price & Availability of KMM53632000BKG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.4481630325317